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ALD1110EPAL
- Onderdeel nummer:
- ALD1110EPAL
- Fabrikant:
- Advanced Linear Devices, Inc.
- Beschrijving:
- MOSFET 2N-CH 10V 8DIP
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 12119 Pieces
- Data papier:
- ALD1110EPAL.pdf
Invoering
BYCHIPS is de voorraadverdeler voor ALD1110EPAL, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor ALD1110EPAL per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 1.01V @ 1µA |
|---|---|
| Leverancier Device Pakket: | 8-PDIP |
| Serie: | EPAD® |
| Rds On (Max) @ Id, VGS: | 500 Ohm @ 5V |
| Vermogen - Max: | 600mW |
| Packaging: | Tube |
| Verpakking / doos: | 8-DIP (0.300", 7.62mm) |
| Temperatuur: | 0°C ~ 70°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 10 Weeks |
| Fabrikant Onderdeelnummer: | ALD1110EPAL |
| Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | 2 N-Channel (Dual) Matched Pair |
| FET Feature: | Standard |
| Uitgebreide beschrijving: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10V 600mW Through Hole 8-PDIP |
| Drain naar de Bron Voltage (Vdss): | 10V |
| Beschrijving: | MOSFET 2N-CH 10V 8DIP |
| Current - Continuous Drain (Id) @ 25 ° C: | - |
| Email: | [email protected] |
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