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VGS (th) (Max) @ Id: | 4V @ 2.5mA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | T-MAX™ [B2] |
Serie: | POWER MOS V® |
Rds On (Max) @ Id, VGS: | 9 mOhm @ 50A, 10V |
Vermogensverlies (Max): | 625W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-247-3 Variant |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | APT10M09B2VFRG |
Input Capacitance (Ciss) (Max) @ Vds: | 9875pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 100V 100A (Tc) 625W (Tc) Through Hole T-MAX™ [B2] |
Drain naar de Bron Voltage (Vdss): | 100V |
Beschrijving: | MOSFET N-CH 100V 100A T-MAX |
Current - Continuous Drain (Id) @ 25 ° C: | 100A (Tc) |
Email: | [email protected] |