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APT38F80B2
- Onderdeel nummer:
- APT38F80B2
- Fabrikant:
- Microsemi
- Beschrijving:
- MOSFET N-CH 800V 41A T-MAX
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 16861 Pieces
- Data papier:
- 1.APT38F80B2.pdf2.APT38F80B2.pdf
Invoering
BYCHIPS is de voorraadverdeler voor APT38F80B2, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor APT38F80B2 per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 5V @ 2.5mA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | T-MAX™ [B2] |
| Serie: | POWER MOS 8™ |
| Rds On (Max) @ Id, VGS: | 240 mOhm @ 20A, 10V |
| Vermogensverlies (Max): | 1040W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-247-3 Variant |
| Andere namen: | APT38F80B2MI APT38F80B2MI-ND |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 22 Weeks |
| Fabrikant Onderdeelnummer: | APT38F80B2 |
| Input Capacitance (Ciss) (Max) @ Vds: | 8070pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 800V 41A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2] |
| Drain naar de Bron Voltage (Vdss): | 800V |
| Beschrijving: | MOSFET N-CH 800V 41A T-MAX |
| Current - Continuous Drain (Id) @ 25 ° C: | 41A (Tc) |
| Email: | [email protected] |
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