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APTM120DA68T1G
- Onderdeel nummer:
- APTM120DA68T1G
- Fabrikant:
- Microsemi
- Beschrijving:
- MOSFET N-CH 1200V 15A SP1
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 18036 Pieces
- Data papier:
- 1.APTM120DA68T1G.pdf2.APTM120DA68T1G.pdf
Invoering
BYCHIPS is de voorraadverdeler voor APTM120DA68T1G, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor APTM120DA68T1G per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 5V @ 2.5mA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | SP1 |
| Serie: | - |
| Rds On (Max) @ Id, VGS: | 816 mOhm @ 12A, 10V |
| Vermogensverlies (Max): | 357W (Tc) |
| Packaging: | Bulk |
| Verpakking / doos: | SP1 |
| Temperatuur: | -40°C ~ 150°C (TJ) |
| montage Type: | Chassis Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | APTM120DA68T1G |
| Input Capacitance (Ciss) (Max) @ Vds: | 6696pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 1200V (1.2kV) 15A 357W (Tc) Chassis Mount SP1 |
| Drain naar de Bron Voltage (Vdss): | 1200V (1.2kV) |
| Beschrijving: | MOSFET N-CH 1200V 15A SP1 |
| Current - Continuous Drain (Id) @ 25 ° C: | 15A |
| Email: | [email protected] |
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