Kopen EPC2020ENG met BYCHPS
Koop met garantie
| VGS (th) (Max) @ Id: | 2.5V @ 16mA |
|---|---|
| Technologie: | GaNFET (Gallium Nitride) |
| Leverancier Device Pakket: | Die |
| Serie: | eGaN® |
| Rds On (Max) @ Id, VGS: | 2.2 mOhm @ 31A, 5V |
| Vermogensverlies (Max): | - |
| Packaging: | Tray |
| Verpakking / doos: | Die |
| Andere namen: | 917-EPC2020ENG EPC2020ENGRB2 |
| Temperatuur: | -40°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | EPC2020ENG |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 60V 60A (Ta) Surface Mount Die |
| Drain naar de Bron Voltage (Vdss): | 60V |
| Beschrijving: | TRANS GAN 60V 60A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25 ° C: | 60A (Ta) |
| Email: | [email protected] |