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| VGS (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Technologie: | GaNFET (Gallium Nitride) |
| Leverancier Device Pakket: | Die |
| Serie: | eGaN® |
| Rds On (Max) @ Id, VGS: | 300 mOhm @ 500mA, 5V |
| Vermogensverlies (Max): | - |
| Packaging: | Tray |
| Verpakking / doos: | Die |
| Andere namen: | 917-EPC8003ENGR EPC8003ENGK |
| Temperatuur: | -40°C ~ 125°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | EPC8003ENGR |
| Input Capacitance (Ciss) (Max) @ Vds: | 38pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.32nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 100V 2.5A (Ta) Surface Mount Die |
| Drain naar de Bron Voltage (Vdss): | 100V |
| Beschrijving: | TRANS GAN 100V 2.5A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25 ° C: | 2.5A (Ta) |
| Email: | [email protected] |