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VGS (th) (Max) @ Id: | 1V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 8-SO |
Serie: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, VGS: | 5.6 mOhm @ 9.5A, 10V |
Vermogensverlies (Max): | 2.7W (Ta) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
Andere namen: | 497-12677-2 STS19N3LLH6-ND |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | STS19N3LLH6 |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 15V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 30V 19A (Tc) 2.7W (Ta) Surface Mount 8-SO |
Drain naar de Bron Voltage (Vdss): | 30V |
Beschrijving: | MOSFET N-CH 30V 19A 8SOIC |
Current - Continuous Drain (Id) @ 25 ° C: | 19A (Tc) |
Email: | [email protected] |