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2N7635-GA
- Onderdeel nummer:
- 2N7635-GA
- Fabrikant:
- GeneSiC Semiconductor
- Beschrijving:
- TRANS SJT 650V 4A TO-257
- Leid Free Status / RoHS Status:
- Bevat lood / RoHS non-compliant
- beschikbare kwaliteit:
- 17287 Pieces
- Data papier:
- 2N7635-GA.pdf
Invoering
BYCHIPS is de voorraadverdeler voor 2N7635-GA, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor 2N7635-GA per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | - |
|---|---|
| Technologie: | SiC (Silicon Carbide Junction Transistor) |
| Leverancier Device Pakket: | TO-257 |
| Serie: | - |
| Rds On (Max) @ Id, VGS: | 415 mOhm @ 4A |
| Vermogensverlies (Max): | 47W (Tc) |
| Packaging: | Bulk |
| Verpakking / doos: | TO-257-3 |
| Andere namen: | 1242-1146 |
| Temperatuur: | -55°C ~ 225°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 18 Weeks |
| Fabrikant Onderdeelnummer: | 2N7635-GA |
| Input Capacitance (Ciss) (Max) @ Vds: | 324pF @ 35V |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | - |
| FET Feature: | - |
| Uitgebreide beschrijving: | 650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | TRANS SJT 650V 4A TO-257 |
| Current - Continuous Drain (Id) @ 25 ° C: | 4A (Tc) (165°C) |
| Email: | [email protected] |
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