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BSO615C G
- Onderdeel nummer:
- BSO615C G
- Beschrijving:
- MOSFET N/P-CH 60V 3.1A/2A 8SOIC
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 15054 Pieces
- Data papier:
- BSO615C G.pdf
Invoering
BYCHIPS is de voorraadverdeler voor BSO615C G, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor BSO615C G per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 2V @ 20µA |
|---|---|
| Leverancier Device Pakket: | PG-DSO-8 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, VGS: | 110 mOhm @ 3.1A, 10V |
| Vermogen - Max: | 2W |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
| Andere namen: | BSO615C BSO615C G-ND BSO615CG BSO615CGHUMA1 BSO615CGT BSO615CGXT BSO615CINTR SP000216311 |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 3 (168 Hours) |
| Fabrikant Standaard Levertijd: | 12 Weeks |
| Fabrikant Onderdeelnummer: | BSO615C G |
| Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 22.5nC @ 10V |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Uitgebreide beschrijving: | Mosfet Array N and P-Channel 60V 3.1A, 2A 2W Surface Mount PG-DSO-8 |
| Drain naar de Bron Voltage (Vdss): | 60V |
| Beschrijving: | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| Current - Continuous Drain (Id) @ 25 ° C: | 3.1A, 2A |
| Email: | [email protected] |
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