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VGS (th) (Max) @ Id: | 5V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-3P |
Serie: | QFET® |
Rds On (Max) @ Id, VGS: | 1.1 Ohm @ 5.5A, 10V |
Vermogensverlies (Max): | 300W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-3P-3, SC-65-3 |
Andere namen: | FQA11N90CFS |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | FQA11N90C |
Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-3P |
Drain naar de Bron Voltage (Vdss): | 900V |
Beschrijving: | MOSFET N-CH 900V 11A TO-3P |
Current - Continuous Drain (Id) @ 25 ° C: | 11A (Tc) |
Email: | [email protected] |