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VGS (th) (Max) @ Id: | 5V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-3PN |
Serie: | QFET® |
Rds On (Max) @ Id, VGS: | 750 mOhm @ 6.3A, 10V |
Vermogensverlies (Max): | 300W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-3P-3, SC-65-3 |
Andere namen: | FQA13N80_F109-ND FQA13N80_F109FS FQA13N80F109 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 16 Weeks |
Fabrikant Onderdeelnummer: | FQA13N80_F109 |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN |
Drain naar de Bron Voltage (Vdss): | 800V |
Beschrijving: | MOSFET N-CH 800V 12.6A TO-3P |
Current - Continuous Drain (Id) @ 25 ° C: | 12.6A (Tc) |
Email: | [email protected] |