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| VGS (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | TO-3PN |
| Serie: | QFET® |
| Rds On (Max) @ Id, VGS: | 1.55 Ohm @ 4.2A, 10V |
| Vermogensverlies (Max): | 220W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-3P-3, SC-65-3 |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | FQA8N80C_F109 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 800V 8.4A (Tc) 220W (Tc) Through Hole TO-3PN |
| Drain naar de Bron Voltage (Vdss): | 800V |
| Beschrijving: | MOSFET N-CH 800V 8.4A TO-3P |
| Current - Continuous Drain (Id) @ 25 ° C: | 8.4A (Tc) |
| Email: | [email protected] |