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FQI13N06LTU
- Onderdeel nummer:
- FQI13N06LTU
- Fabrikant:
- Fairchild/ON Semiconductor
- Beschrijving:
- MOSFET N-CH 60V 13.6A I2PAK
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 12028 Pieces
- Data papier:
- FQI13N06LTU.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | I2PAK |
| Serie: | QFET® |
| Rds On (Max) @ Id, VGS: | 110 mOhm @ 6.8A, 10V |
| Vermogensverlies (Max): | 3.75W (Ta), 45W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Temperatuur: | -55°C ~ 175°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | FQI13N06LTU |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 60V 13.6A (Tc) 3.75W (Ta), 45W (Tc) Through Hole I2PAK |
| Drain naar de Bron Voltage (Vdss): | 60V |
| Beschrijving: | MOSFET N-CH 60V 13.6A I2PAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 13.6A (Tc) |
| Email: | [email protected] |
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