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VGS (th) (Max) @ Id: | 4V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-220F-3 (Y-Forming) |
Serie: | QFET® |
Rds On (Max) @ Id, VGS: | 1.4 Ohm @ 3.5A, 10V |
Vermogensverlies (Max): | 52W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 Full Pack, Formed Leads |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 6 Weeks |
Fabrikant Onderdeelnummer: | FQPF7N65CYDTU |
Input Capacitance (Ciss) (Max) @ Vds: | 1245pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 (Y-Forming) |
Drain naar de Bron Voltage (Vdss): | 650V |
Beschrijving: | MOSFET N-CH 650V 7A TO-220F |
Current - Continuous Drain (Id) @ 25 ° C: | 7A (Tc) |
Email: | [email protected] |