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IPA65R1K5CEXKSA1
- Onderdeel nummer:
- IPA65R1K5CEXKSA1
- Beschrijving:
- MOSFET N-CH 650V TO220-3
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 17995 Pieces
- Data papier:
- IPA65R1K5CEXKSA1.pdf
Invoering
BYCHIPS is de voorraadverdeler voor IPA65R1K5CEXKSA1, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor IPA65R1K5CEXKSA1 per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 3.5V @ 130µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO220 Full Pack |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 1.5 Ohm @ 1A, 10V |
| Vermogensverlies (Max): | 30W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-220-3 Full Pack |
| Andere namen: | SP001429484 |
| Temperatuur: | -40°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 6 Weeks |
| Fabrikant Onderdeelnummer: | IPA65R1K5CEXKSA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Uitgebreide beschrijving: | N-Channel 650V 5.2A (Tc) 30W (Tc) Through Hole PG-TO220 Full Pack |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH 650V TO220-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 5.2A (Tc) |
| Email: | [email protected] |
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