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VGS (th) (Max) @ Id: | 4V @ 39µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO263-2 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, VGS: | 26 mOhm @ 35A, 10V |
Vermogensverlies (Max): | 71W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andere namen: | IPB26CN10N G IPB26CN10N G-ND SP000277692 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | IPB26CN10NGATMA1 |
Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-2 |
Drain naar de Bron Voltage (Vdss): | 100V |
Beschrijving: | MOSFET N-CH 100V 35A TO263-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 35A (Tc) |
Email: | [email protected] |