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IPD053N08N3GBTMA1
- Onderdeel nummer:
- IPD053N08N3GBTMA1
- Beschrijving:
- MOSFET N-CH 80V 90A TO252-3
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 17506 Pieces
- Data papier:
- IPD053N08N3GBTMA1.pdf
Invoering
BYCHIPS is de voorraadverdeler voor IPD053N08N3GBTMA1, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor IPD053N08N3GBTMA1 per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 3.5V @ 90µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, VGS: | 5.3 mOhm @ 90A, 10V |
| Vermogensverlies (Max): | 150W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere namen: | IPD053N08N3 G IPD053N08N3 G-ND IPD053N08N3 GTR-ND IPD053N08N3G SP000395183 |
| Temperatuur: | -55°C ~ 175°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | IPD053N08N3GBTMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3 |
| Drain naar de Bron Voltage (Vdss): | 80V |
| Beschrijving: | MOSFET N-CH 80V 90A TO252-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 90A (Tc) |
| Email: | [email protected] |
Verwante onderdelen voor IPD053N08N3GBTMA1
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IPD053N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 18A TO252-3 | Onderzoek |
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IPD050N03LGBTMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Onderzoek |
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