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IPD60R1K5CEATMA1
- Onderdeel nummer:
- IPD60R1K5CEATMA1
- Beschrijving:
- MOSFET N-CH 600V TO-252-3
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 18687 Pieces
- Data papier:
- IPD60R1K5CEATMA1.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 3.5V @ 90µA |
|---|---|
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | TO-252-3 |
| Serie: | CoolMOS™ CE |
| Rds On (Max) @ Id, VGS: | 1.5 Ohm @ 1.1A, 10V |
| Vermogensverlies (Max): | 28W (Tc) |
| Packaging: | Original-Reel® |
| Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere namen: | IPD60R1K5CEATMA1DKR |
| Temperatuur: | -40°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 3 (168 Hours) |
| Fabrikant Onderdeelnummer: | IPD60R1K5CEATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 600V 3.1A (Tc) 28W (Tc) Surface Mount TO-252-3 |
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
| Drain naar de Bron Voltage (Vdss): | 600V |
| Beschrijving: | MOSFET N-CH 600V TO-252-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 3.1A (Tc) |
| Email: | [email protected] |
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