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IPD65R660CFDAATMA1
- Onderdeel nummer:
- IPD65R660CFDAATMA1
- Beschrijving:
- MOSFET N-CH TO252-3
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 15617 Pieces
- Data papier:
- IPD65R660CFDAATMA1.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 4.5V @ 214.55µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO252-3 |
| Serie: | Automotive, AEC-Q101, CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 660 mOhm @ 3.22A, 10V |
| Vermogensverlies (Max): | 62.5W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere namen: | SP000928260 |
| Temperatuur: | -40°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 16 Weeks |
| Fabrikant Onderdeelnummer: | IPD65R660CFDAATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH TO252-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
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