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IPI65R280C6XKSA1
- Onderdeel nummer:
- IPI65R280C6XKSA1
- Beschrijving:
- MOSFET N-CH 650V 13.8A TO262
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 17382 Pieces
- Data papier:
- IPI65R280C6XKSA1.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 3.5V @ 440µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO262-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 280 mOhm @ 4.4A, 10V |
| Vermogensverlies (Max): | 104W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andere namen: | IPI65R280C6 IPI65R280C6-ND SP000785056 |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 12 Weeks |
| Fabrikant Onderdeelnummer: | IPI65R280C6XKSA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 650V 13.8A (Tc) 104W (Tc) Through Hole PG-TO262-3 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH 650V 13.8A TO262 |
| Current - Continuous Drain (Id) @ 25 ° C: | 13.8A (Tc) |
| Email: | [email protected] |
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