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VGS (th) (Max) @ Id: | 2V @ 253µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO262-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, VGS: | 4.4 mOhm @ 80A, 10V |
Vermogensverlies (Max): | 137W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen: | IPI80P03P4L-04 IPI80P03P4L-04-ND SP000396318 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 14 Weeks |
Fabrikant Onderdeelnummer: | IPI80P03P4L04AKSA1 |
Input Capacitance (Ciss) (Max) @ Vds: | 11300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO262-3 |
Drain naar de Bron Voltage (Vdss): | 30V |
Beschrijving: | MOSFET P-CH 30V 80A TO262-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 80A (Tc) |
Email: | [email protected] |