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IPW60R250CP
- Onderdeel nummer:
- IPW60R250CP
- Beschrijving:
- MOSFET N-CH 650V 12A TO-247
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 12014 Pieces
- Data papier:
- 1.IPW60R250CP.pdf2.IPW60R250CP.pdf
Invoering
BYCHIPS is de voorraadverdeler voor IPW60R250CP, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor IPW60R250CP per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 3.5V @ 440µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO247-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 250 mOhm @ 7.8A, 10V |
| Vermogensverlies (Max): | 104W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-247-3 |
| Andere namen: | IPW60R250CPFKSA1 SP000310511 |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | IPW60R250CP |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 650V 12A (Tc) 104W (Tc) Through Hole PG-TO247-3 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH 650V 12A TO-247 |
| Current - Continuous Drain (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
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