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VGS (th) (Max) @ Id: | 4.5V @ 200µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO247-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, VGS: | 660 mOhm @ 2.1A, 10V |
Vermogensverlies (Max): | 62.5W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-247-3 |
Andere namen: | IPW65R660CFD IPW65R660CFD-ND SP000861700 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 16 Weeks |
Fabrikant Onderdeelnummer: | IPW65R660CFDFKSA1 |
Input Capacitance (Ciss) (Max) @ Vds: | 615pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 700V 6A (Tc) 62.5W (Tc) Through Hole PG-TO247-3 |
Drain naar de Bron Voltage (Vdss): | 700V |
Beschrijving: | MOSFET N-CH 700V 6A TO247 |
Current - Continuous Drain (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |