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VGS (th) (Max) @ Id: | 2.35V @ 50µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PQFN (3x3) |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 3.8 mOhm @ 20A, 10V |
Vermogensverlies (Max): | 2.7W (Ta), 37W (Tc) |
Packaging: | Original-Reel® |
Verpakking / doos: | 8-VQFN Exposed Pad |
Andere namen: | IRFHM830TR2PBFDKR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | IRFHM830TR2PBF |
Input Capacitance (Ciss) (Max) @ Vds: | 2155pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3) |
Drain naar de Bron Voltage (Vdss): | 30V |
Beschrijving: | MOSFET N-CH 30V 21A PQFN |
Current - Continuous Drain (Id) @ 25 ° C: | 21A (Ta), 40A (Tc) |
Email: | [email protected] |