Kopen IRFU1010Z met BYCHPS
Koop met garantie
VGS (th) (Max) @ Id: | 4V @ 100µA |
---|---|
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | IPAK (TO-251) |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 7.5 mOhm @ 42A, 10V |
Vermogensverlies (Max): | 140W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Short Leads, IPak, TO-251AA |
Andere namen: | *IRFU1010Z |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | IRFU1010Z |
Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 55V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251) |
Drain naar de Bron Voltage (Vdss): | 55V |
Beschrijving: | MOSFET N-CH 55V 42A I-PAK |
Current - Continuous Drain (Id) @ 25 ° C: | 42A (Tc) |
Email: | [email protected] |