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VGS (th) (Max) @ Id: | 1V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-262 |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 8 mOhm @ 62A, 10V |
Vermogensverlies (Max): | 2.4W (Ta), 167W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen: | *IRL1104LPBF SP001573746 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | IRL1104LPBF |
Input Capacitance (Ciss) (Max) @ Vds: | 3445pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 40V 104A (Tc) 2.4W (Ta), 167W (Tc) Through Hole TO-262 |
Drain naar de Bron Voltage (Vdss): | 40V |
Beschrijving: | MOSFET N-CH 40V 104A TO-262 |
Current - Continuous Drain (Id) @ 25 ° C: | 104A (Tc) |
Email: | [email protected] |