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SIR838DP-T1-GE3
- Onderdeel nummer:
- SIR838DP-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beschrijving:
- MOSFET N-CH 150V 35A PPAK SO-8
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 15117 Pieces
- Data papier:
- SIR838DP-T1-GE3.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PowerPAK® SO-8 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, VGS: | 33 mOhm @ 8.3A, 10V |
| Vermogensverlies (Max): | 5.4W (Ta), 96W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | PowerPAK® SO-8 |
| Andere namen: | SIR838DP-T1-GE3TR SIR838DPT1GE3 |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | SIR838DP-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2075pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 150V 35A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8 |
| Drain naar de Bron Voltage (Vdss): | 150V |
| Beschrijving: | MOSFET N-CH 150V 35A PPAK SO-8 |
| Current - Continuous Drain (Id) @ 25 ° C: | 35A (Tc) |
| Email: | [email protected] |
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