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SPB08P06PGATMA1
- Onderdeel nummer:
- SPB08P06PGATMA1
- Beschrijving:
- MOSFET P-CH 60V 8.8A TO-263
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 12528 Pieces
- Data papier:
- SPB08P06PGATMA1.pdf
Invoering
BYCHIPS is de voorraadverdeler voor SPB08P06PGATMA1, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor SPB08P06PGATMA1 per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO263-2 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, VGS: | 300 mOhm @ 6.2A, 10V |
| Vermogensverlies (Max): | 42W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andere namen: | SP000102179 SPB08P06P G SPB08P06P G-ND SPB08P06PGINTR SPB08P06PGINTR-ND SPB08P06PGXT |
| Temperatuur: | -55°C ~ 175°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 14 Weeks |
| Fabrikant Onderdeelnummer: | SPB08P06PGATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | P-Channel 60V 8.8A (Ta) 42W (Tc) Surface Mount PG-TO263-2 |
| Drain naar de Bron Voltage (Vdss): | 60V |
| Beschrijving: | MOSFET P-CH 60V 8.8A TO-263 |
| Current - Continuous Drain (Id) @ 25 ° C: | 8.8A (Ta) |
| Email: | [email protected] |
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