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| VGS (th) (Max) @ Id: | 5.5V @ 500µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO263-3-2 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 380 mOhm @ 7A, 10V |
| Vermogensverlies (Max): | 125W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andere namen: | SPB11N60S5 SPB11N60S5-ND SPB11N60S5INTR SPB11N60S5INTR-ND SPB11N60S5XT |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | SPB11N60S5ATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2 |
| Drain naar de Bron Voltage (Vdss): | 600V |
| Beschrijving: | MOSFET N-CH 600V 11A TO-263 |
| Current - Continuous Drain (Id) @ 25 ° C: | 11A (Tc) |
| Email: | [email protected] |