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		| VGS (th) (Max) @ Id: | 5.5V @ 1mA | 
|---|---|
| Technologie: | MOSFET (Metal Oxide) | 
| Leverancier Device Pakket: | PG-TO263-3-2 | 
| Serie: | CoolMOS™ | 
| Rds On (Max) @ Id, VGS: | 190 mOhm @ 13A, 10V | 
| Vermogensverlies (Max): | 208W (Tc) | 
| Packaging: | Tape & Reel (TR) | 
| Verpakking / doos: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 
| Andere namen: | SPB20N60S5 SPB20N60S5-ND SPB20N60S5INTR SPB20N60S5INTR-ND SPB20N60S5XT | 
| Temperatuur: | -55°C ~ 150°C (TJ) | 
| montage Type: | Surface Mount | 
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) | 
| Fabrikant Onderdeelnummer: | SPB20N60S5ATMA1 | 
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V | 
| Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V | 
| FET Type: | N-Channel | 
| FET Feature: | - | 
| Uitgebreide beschrijving: | N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2 | 
| Drain naar de Bron Voltage (Vdss): | 600V | 
| Beschrijving: | MOSFET N-CH 600V 20A TO-263 | 
| Current - Continuous Drain (Id) @ 25 ° C: | 20A (Tc) | 
| Email: | [email protected] |