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SPI11N65C3XKSA1
- Onderdeel nummer:
- SPI11N65C3XKSA1
- Beschrijving:
- MOSFET N-CH 650V 11A TO-262
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 14371 Pieces
- Data papier:
- SPI11N65C3XKSA1.pdf
Invoering
BYCHIPS is de voorraadverdeler voor SPI11N65C3XKSA1, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor SPI11N65C3XKSA1 per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 3.9V @ 500µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO262-3-1 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 380 mOhm @ 7A, 10V |
| Vermogensverlies (Max): | 125W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andere namen: | SP000680994 SPI11N65C3 SPI11N65C3-ND SPI11N65C3IN SPI11N65C3IN-ND SPI11N65C3X SPI11N65C3XK |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 8 Weeks |
| Fabrikant Onderdeelnummer: | SPI11N65C3XKSA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-TO262-3-1 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH 650V 11A TO-262 |
| Current - Continuous Drain (Id) @ 25 ° C: | 11A (Tc) |
| Email: | [email protected] |
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