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SPP07N60S5
- Onderdeel nummer:
- SPP07N60S5
- Beschrijving:
- MOSFET N-CH 650V 7.3A TO-220AB
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 19305 Pieces
- Data papier:
- SPP07N60S5.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 5.5V @ 350µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO220-3-1 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, VGS: | 600 mOhm @ 4.6A, 10V |
| Vermogensverlies (Max): | 83W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-220-3 |
| Andere namen: | SPP07N60S5BKSA1 SPP07N60S5IN SPP07N60S5X SPP07N60S5XTIN SPP07N60S5XTIN-ND |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | SPP07N60S5 |
| Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO220-3-1 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH 650V 7.3A TO-220AB |
| Current - Continuous Drain (Id) @ 25 ° C: | 7.3A (Tc) |
| Email: | [email protected] |
Verwante onderdelen voor SPP07N60S5
| Beeld | Onderdeel nummer | fabrikanten | Beschrijving | Uitzicht |
|---|---|---|---|---|
 |
SPP07N60C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220AB | Onderzoek |
 |
SPP07N65C3XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Onderzoek |
|
SPP07N60CFDHKSA1 | Infineon Technologies | MOSFET N-CH 650V 6.6A TO-220 | Onderzoek |
|
SPP07N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220AB | Onderzoek |
|
SPP07N60S5HKSA1 | Infineon Technologies | LOW POWER_LEGACY | Onderzoek |
|
SPP07N60S5XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Onderzoek |
 |
STGD1100LT1G | ON Semiconductor | MOSFET N-CH 20V 3.3A SC74 | Onderzoek |
|
SPP07N65C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220 | Onderzoek |
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