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VGS (th) (Max) @ Id: | 3.9V @ 500µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, VGS: | 380 mOhm @ 7A, 10V |
Vermogensverlies (Max): | 125W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | SP000014459 SPP12N50C3 SPP12N50C3IN SPP12N50C3IN-ND SPP12N50C3X SPP12N50C3XK SPP12N50C3XTIN SPP12N50C3XTIN-ND |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | SPP12N50C3HKSA1 |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 560V 11.6A (Tc) 125W (Tc) Through Hole PG-TO220-3-1 |
Drain naar de Bron Voltage (Vdss): | 560V |
Beschrijving: | MOSFET N-CH 560V 11.6A TO-220 |
Current - Continuous Drain (Id) @ 25 ° C: | 11.6A (Tc) |
Email: | [email protected] |