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VGS (th) (Max) @ Id: | 4V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO251-3 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, VGS: | 300 mOhm @ 6.2A, 10V |
Vermogensverlies (Max): | 42W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Short Leads, IPak, TO-251AA |
Andere namen: | SP000012086 SPU08P06PIN SPU08P06PX SPU08P06PXTIN SPU08P06PXTIN-ND |
Temperatuur: | - |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | SPU08P06P |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | P-Channel 60V 8.83A (Ta) 42W (Tc) Through Hole PG-TO251-3 |
Drain naar de Bron Voltage (Vdss): | 60V |
Beschrijving: | MOSFET P-CH 60V 8.83A TO-251 |
Current - Continuous Drain (Id) @ 25 ° C: | 8.83A (Ta) |
Email: | [email protected] |