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SQM200N04-1M1L_GE3
- Onderdeel nummer:
- SQM200N04-1M1L_GE3
- Fabrikant:
- Vishay / Siliconix
- Beschrijving:
- MOSFET N-CH 40V 200A TO-263
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 19219 Pieces
- Data papier:
- SQM200N04-1M1L_GE3.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | TO-263-7 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, VGS: | 1.1 mOhm @ 30A, 10V |
| Vermogensverlies (Max): | 375W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-263-7, D²Pak (6 Leads + Tab) |
| Andere namen: | SQM200N04-1M1L-GE3 SQM200N04-1M1L-GE3-ND |
| Temperatuur: | -55°C ~ 175°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 18 Weeks |
| Fabrikant Onderdeelnummer: | SQM200N04-1M1L_GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 20655pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 413nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7 |
| Drain naar de Bron Voltage (Vdss): | 40V |
| Beschrijving: | MOSFET N-CH 40V 200A TO-263 |
| Current - Continuous Drain (Id) @ 25 ° C: | 200A (Tc) |
| Email: | [email protected] |
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