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STB10NK60Z-1
- Onderdeel nummer:
- STB10NK60Z-1
- Fabrikant:
- ST
- Beschrijving:
- MOSFET N-CH 600V 10A I2PAK
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 16955 Pieces
- Data papier:
- STB10NK60Z-1.pdf
Invoering
BYCHIPS is de voorraadverdeler voor STB10NK60Z-1, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor STB10NK60Z-1 per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | I2PAK |
| Serie: | SuperMESH™ |
| Rds On (Max) @ Id, VGS: | 750 mOhm @ 4.5A, 10V |
| Vermogensverlies (Max): | 115W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 18 Weeks |
| Fabrikant Onderdeelnummer: | STB10NK60Z-1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2PAK |
| Drain naar de Bron Voltage (Vdss): | 600V |
| Beschrijving: | MOSFET N-CH 600V 10A I2PAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 10A (Tc) |
| Email: | [email protected] |
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