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| VGS (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | I2PAK |
| Serie: | MDmesh™ II |
| Rds On (Max) @ Id, VGS: | 380 mOhm @ 5.5A, 10V |
| Vermogensverlies (Max): | 100W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | STI12NM50N |
| Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 500V 11A (Tc) 100W (Tc) Through Hole I2PAK |
| Drain naar de Bron Voltage (Vdss): | 500V |
| Beschrijving: | MOSFET N-CH 500V 11A I2PAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 11A (Tc) |
| Email: | [email protected] |