Kopen UNR42100RA met BYCHPS
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| Spanning - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| transistor Type: | NPN - Pre-Biased |
| Leverancier Device Pakket: | NS-B1 |
| Serie: | - |
| Weerstand - Emitter Base (R2) (Ohm): | - |
| Weerstand - Base (R1) (Ohm): | 47k |
| Vermogen - Max: | 300mW |
| Packaging: | Tape & Box (TB) |
| Verpakking / doos: | NS-B1 |
| Andere namen: | UNR42100RATB |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | UNR42100RA |
| Frequentie - Transition: | 150MHz |
| Uitgebreide beschrijving: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1 |
| Beschrijving: | TRANS PREBIAS NPN 300MW NS-B1 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |