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DMJ70H1D3SH3
- Onderdeel nummer:
- DMJ70H1D3SH3
- Fabrikant:
- Diodes Incorporated
- Beschrijving:
- MOSFET BVDSS: 651V 800V TO251
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 13920 Pieces
- Data papier:
- DMJ70H1D3SH3.pdf
Invoering
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bestek
| VGS (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | TO-251 |
| Serie: | - |
| Rds On (Max) @ Id, VGS: | 1.3 Ohm @ 2.5A, 10V |
| Vermogensverlies (Max): | 41W (Tc) |
| Packaging: | Tube |
| Verpakking / doos: | TO-251-3 Stub Leads, IPak |
| Andere namen: | DMJ70H1D3SH3-ND |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 8 Weeks |
| Fabrikant Onderdeelnummer: | DMJ70H1D3SH3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 351pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.9nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 700V 4.6A (Tc) 41W (Tc) Through Hole TO-251 |
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
| Drain naar de Bron Voltage (Vdss): | 700V |
| Beschrijving: | MOSFET BVDSS: 651V 800V TO251 |
| Current - Continuous Drain (Id) @ 25 ° C: | 4.6A (Tc) |
| Email: | [email protected] |
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