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GP2M007A065HG
- Onderdeel nummer:
- GP2M007A065HG
- Fabrikant:
- Global Power Technologies Group
- Beschrijving:
- MOSFET N-CH 650V 6.5A TO220
- Leid Free Status / RoHS Status:
- Loodvrij / RoHS-conform
- beschikbare kwaliteit:
- 12406 Pieces
- Data papier:
- GP2M007A065HG.pdf
Invoering
BYCHIPS is de voorraadverdeler voor GP2M007A065HG, we hebben de voorraden voor directe verzending en ook beschikbaar voor langdurige levering. Stuur ons uw aankoopplan voor GP2M007A065HG per e-mail, we geven u een beste prijs volgens uw plan.
bestek
| VGS (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | TO-220 |
| Serie: | - |
| Rds On (Max) @ Id, VGS: | 1.4 Ohm @ 3.25A, 10V |
| Vermogensverlies (Max): | 120W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-220-3 |
| Temperatuur: | -55°C ~ 150°C (TJ) |
| montage Type: | Through Hole |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | GP2M007A065HG |
| Input Capacitance (Ciss) (Max) @ Vds: | 1072pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 650V 6.5A (Tc) 120W (Tc) Through Hole TO-220 |
| Drain naar de Bron Voltage (Vdss): | 650V |
| Beschrijving: | MOSFET N-CH 650V 6.5A TO220 |
| Current - Continuous Drain (Id) @ 25 ° C: | 6.5A (Tc) |
| Email: | [email protected] |
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