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| VGS (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | D2PAK |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, VGS: | 12 mOhm @ 50A, 10V |
| Vermogensverlies (Max): | 200W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Temperatuur: | -55°C ~ 175°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Onderdeelnummer: | IRF1010ESTRR |
| Input Capacitance (Ciss) (Max) @ Vds: | 3210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | N-Channel 60V 84A (Tc) 200W (Tc) Surface Mount D2PAK |
| Drain naar de Bron Voltage (Vdss): | 60V |
| Beschrijving: | MOSFET N-CH 60V 84A D2PAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 84A (Tc) |
| Email: | [email protected] |