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VGS (th) (Max) @ Id: | 4V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-220AB |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 7.5 mOhm @ 75A, 10V |
Vermogensverlies (Max): | 140W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | *IRF1010Z |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | IRF1010Z |
Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 55V 75A (Tc) 140W (Tc) Through Hole TO-220AB |
Drain naar de Bron Voltage (Vdss): | 55V |
Beschrijving: | MOSFET N-CH 55V 75A TO-220AB |
Current - Continuous Drain (Id) @ 25 ° C: | 75A (Tc) |
Email: | [email protected] |