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| VGS (th) (Max) @ Id: | 4V @ 380µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Leverancier Device Pakket: | PG-TO252-3 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, VGS: | 1 Ohm @ 2.8A, 10V |
| Vermogensverlies (Max): | 38W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere namen: | SP000212230 SPD04P10P G SPD04P10P G-ND |
| Temperatuur: | -55°C ~ 175°C (TJ) |
| montage Type: | Surface Mount |
| Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
| Fabrikant Standaard Levertijd: | 14 Weeks |
| Fabrikant Onderdeelnummer: | SPD04P10PGBTMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 319pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Uitgebreide beschrijving: | P-Channel 100V 4A (Tc) 38W (Tc) Surface Mount PG-TO252-3 |
| Drain naar de Bron Voltage (Vdss): | 100V |
| Beschrijving: | MOSFET P-CH 100V 4A TO252-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 4A (Tc) |
| Email: | [email protected] |