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VGS (th) (Max) @ Id: | 4V @ 250µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO262-3-1 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, VGS: | 3.3 mOhm @ 80A, 10V |
Vermogensverlies (Max): | 300W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen: | SP000013492 SPI100N03S203X |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | SPI100N03S2-03 |
Input Capacitance (Ciss) (Max) @ Vds: | 7020pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 30V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3-1 |
Drain naar de Bron Voltage (Vdss): | 30V |
Beschrijving: | MOSFET N-CH 30V 100A I2PAK |
Current - Continuous Drain (Id) @ 25 ° C: | 100A (Tc) |
Email: | [email protected] |