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VGS (th) (Max) @ Id: | 4V @ 21µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO262-3-1 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, VGS: | 170 mOhm @ 7.8A, 10V |
Vermogensverlies (Max): | 50W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen: | SP000013846 SPI10N10X |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | SPI10N10 |
Input Capacitance (Ciss) (Max) @ Vds: | 426pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 19.4nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 100V 10.3A (Tc) 50W (Tc) Through Hole PG-TO262-3-1 |
Drain naar de Bron Voltage (Vdss): | 100V |
Beschrijving: | MOSFET N-CH 100V 10.3A I2PAK |
Current - Continuous Drain (Id) @ 25 ° C: | 10.3A (Tc) |
Email: | [email protected] |