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VGS (th) (Max) @ Id: | 5.5V @ 500µA |
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Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, VGS: | 380 mOhm @ 7A, 10V |
Vermogensverlies (Max): | 125W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | SPP11N60S5 SPP11N60S5IN SPP11N60S5IN-ND SPP11N60S5X SPP11N60S5XTIN SPP11N60S5XTIN-ND |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | SPP11N60S5HKSA1 |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Uitgebreide beschrijving: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1 |
Drain naar de Bron Voltage (Vdss): | 650V |
Beschrijving: | MOSFET N-CH 650V 11A TO-220AB |
Current - Continuous Drain (Id) @ 25 ° C: | 11A (Tc) |
Email: | [email protected] |